Diffusivity variation in Electromigration failure
نویسنده
چکیده
Electromigration driven void dynamics plays an important role in the reliability of copper interconnects; a proper understanding of which is made more difficult due to local variations in line microstructure. In simulations, the parameter which best incorporates these variations is the effective atomic diffusivity D eff which is sensitive to grain size and orientation, interface layer thickness, etc. We examine a number of experimental results and conclude that, to explain observations using current theoretical models, D eff values must vary significantly along the interconnect, and that such variations are enough to yield encouraging simulations of resistance variations under bidirectional stress.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 52 شماره
صفحات -
تاریخ انتشار 2012